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Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al2O3/Si3N4/Si Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 784 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C9.6/E9.6
- Print publication:
- 2003
-
- Article
- Export citation
Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al2O3/Si3N4/Si Buffer Layer
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E9.6/C9.6
- Print publication:
- 2003
-
- Article
- Export citation