5 results
Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 57
- Print publication:
- 1990
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Role of Si1−xGex Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si0. 5Ge0.5/Ge/Si1−xGex Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 491
- Print publication:
- 1990
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Reverse Dependence of Ge Surface Segregation on Growth Temperature in Si-Mbe
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- Journal:
- MRS Online Proceedings Library Archive / Volume 202 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 365
- Print publication:
- 1990
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Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 275
- Print publication:
- 1989
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Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 777
- Print publication:
- 1989
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