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Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-Structures

Published online by Cambridge University Press:  28 February 2011

Masanobu Miyao ,
Eiichi Murakami ,
Hiroyuki Etoh  and
Kiyokazu Nakagawa
Masanobu Miyao
Affiliation:
Central Research Labratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Eiichi Murakami
Affiliation:
Central Research Labratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Hiroyuki Etoh
Affiliation:
Central Research Labratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Kiyokazu Nakagawa
Affiliation:
Central Research Labratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Formation and characterization of a new hetero -structure of modulation doped p-Si0.5Ge0.5/Ge/Si1-xGex are comprehensively studied. In the MBE growth, thick Si1-xGex buffer layers are grown incommensurately at high temperature (520°C), and thin Si0.5Ge0.5/Ge layers are grown commensurately at low temperature (≦450°C). The strain field in the Ge channel layers can be precisely controlled by changing the Si composition (1-X) in the Si 1 -xGex buffer layers. As a result, a large energy discontinuity in the valence band (0.17 eV) is realized at the hetero -interface of p-Si0.5Ge0.5/Ge. This enables a high mobility of two -dimensional hole gas (4500 cm2/Vs) at 77 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 777
Copyright
Copyright © Materials Research Society 1990

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