2 results
High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I04-03
- Print publication:
- 2006
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- Article
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Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF15-03
- Print publication:
- 2005
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- Article
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