We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with
Sn:In2O3 (ITO) or Pt top electrodes and investigated
the ferroelectric properties of these PLZT capacitors. The shape of
polarization–voltage hysteresis loops was essentially unchanged and
the decrease in the remnant polarization of the ITO/PLZT/Pt capacitors was
smaller than that of the Pt/PLZT/Pt capacitors after annealing with 3%
D2 (in N2) at 200°C and 1 Torr
(i.e., FGAD). Time of flight
secondary mass spectrometry revealed that the D atoms were incorporated into the
PLZT film of the Pt/PLZT/Pt capacitors after 3% D2 annealing,
resulting in a decrease in the ferroelectric properties. In comparison, no D ion
signal was detected in the PLZT film after FGAD for ITO/PLZT/Pt
capacitors.