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Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 25 May 2012, mrss12-1430-e03-16
- Print publication:
- 2012
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- Article
- Export citation