5 results
High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y7.4
- Print publication:
- 2003
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High common-emitter current gains obtained by pnp GaN bipolar junction transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I12.2.1
- Print publication:
- 2001
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High Room-Temperature Hole Concentrations above 1019 cm−3 in Mg-Doped InGaN/GaN Superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T5.11.1
- Print publication:
- 2000
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p-InGaN/n-GaN Heterojunction Diodes and their Application to Heterojunction Bipolar Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G13.10
- Print publication:
- 2000
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Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 448 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 259
- Print publication:
- 1996
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