7 results
Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 429 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 343
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- 1996
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Ultra-Shallow Raised P+N Junctions with Self-Aligned Titanium Silicide Contacts formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 401
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- 1995
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N-Channel Mos Transistors below 0.5 μm with Ultra-Shallow Channels formed by Low Temperature Selective Silicon Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 347
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- 1995
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Nucleation and Growth of Polycrystalline Silicon Films in an Ultra high Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane and Hydrogen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 343 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 673
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- 1994
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In-Situ Doped Multi-Layer Epitaxial Structures with Abrupt Doping Transitions by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 342 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 43
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- 1994
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Cleaning during Initial Stages of Epitaxial Growth in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 463
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- 1993
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Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 519
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- 1993
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