9 results
Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e13
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- 1997
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Electrical and Optical Characterisation of Homojjunction Gallium Nitride Light Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1113
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- 1997
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Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e32
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- 1996
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Yellow Band and Deep levels in Undoped MOVPE GaN.
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e7
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- 1996
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TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 311
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- 1996
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Evidence for Shallow Acceptor Levels in MBE Grown GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e22
- Print publication:
- 1996
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The Growth of GaN Films by Migration-Enhanced Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 325
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- 1996
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IRTF Studies of the Impacts of Comet P/Shoemaker-Levy 9 in to Jupiter
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- Journal:
- Highlights of Astronomy / Volume 10 / 1995
- Published online by Cambridge University Press:
- 30 March 2016, pp. 651-652
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- 1995
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