5 results
Low dislocation density, high power InGaN laser diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e3
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- 2004
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Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I7.6.1
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- 2001
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Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G9.8
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- 2000
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Native defects and carbon impurity in cubic BN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e48
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- 1998
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Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e18
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- 1997
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