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Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 317
- Print publication:
- 1999
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- Article
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Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 177
- Print publication:
- 1999
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- Article
- Export citation