4 results
Self-Consistent Mosfet Tunneling Simulations—Trends in the Gate and Substrate Currents and the Drain-Current Turnaround Effect with Oxide Scaling
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 227
- Print publication:
- 1999
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Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric Pmos Devices with Poly-Si1−Gex Gate Material
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 127
- Print publication:
- 1999
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Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2 /Ta2O5, and Pure Ta2O5, in Mosfets with 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 515
- Print publication:
- 1999
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Stress-Assisted Diffusion of Boron and Arsenic in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 36 / 1984
- Published online by Cambridge University Press:
- 21 February 2011, 71
- Print publication:
- 1984
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