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Frequency Response of Trap States in an AlxGa1−xN/GaN Heterostructure Field-Effect Transistor Measured at the Nanoscale by dC/dV Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E5.1
- Print publication:
- 2001
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- Article
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