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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 459-466
- Print publication:
- 2000
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- Article
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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.1
- Print publication:
- 1999
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On heavy traffic approximations for transient characteristics of M/M/∞ queues
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- Journal:
- Journal of Applied Probability / Volume 33 / Issue 2 / September 1996
- Published online by Cambridge University Press:
- 14 July 2016, pp. 490-506
- Print publication:
- September 1996
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