6 results
The Properties of a Plasma Deposited Candidate Insulator for Future Multilevel Interconnects Technology.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 260 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 347
- Print publication:
- 1992
-
- Article
- Export citation
Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 219 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 45
- Print publication:
- 1991
-
- Article
- Export citation
Capacitance Studies of Metastable States in Light-Soaked, Quench-Cooled, and Bias-Annealed N-Type Hydrogenated Amorphous Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 192 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 707
- Print publication:
- 1990
-
- Article
- Export citation
Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 149 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 729
- Print publication:
- 1989
-
- Article
- Export citation
Photocapacitance Studies Of Light Induced Changes in the Density of Gap States of N-Type Doped and Undoped Hydrogenated Amorphous Silicon Films
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 118 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 141
- Print publication:
- 1988
-
- Article
- Export citation
The Role of Lattice Relaxation in the Competition Between Optical and Thermal Transitions from Gap States in Hydroacenated Amorphous Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 95 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 33
- Print publication:
- 1987
-
- Article
- Export citation