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ZnO/PS/p-Si heterojunction properties

Published online by Cambridge University Press:  05 June 2014

Uday Muhsin Nayef ,
Mohammed Waleed Muayad  and
Haider Amer Khalaf
Uday Muhsin Nayef
Affiliation:
Department of Applied Science, University of Technology, 9183 Baghdad, Iraq
Mohammed Waleed Muayad*
Affiliation:
Department of Applied Science, University of Technology, 9183 Baghdad, Iraq
Haider Amer Khalaf
Affiliation:
Department of Applied Science, University of Technology, 9183 Baghdad, Iraq
*
ae-mail: mwaleed1987@gmail.com
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Abstract

In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/c-Si/Al due to increasing in depletion layer junction compere with PS layer.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 2 , May 2014 , 20104
Copyright
© EDP Sciences, 2014

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