Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-24T11:48:33.673Z Has data issue: false hasContentIssue false
  • English
  • Français

ZnO and Al-doped ZnO thin films prepared by spray pyrolysis for ethanol gas sensing

Published online by Cambridge University Press:  18 August 2011

Y. Bakha ,
K.M. Bendimerad  and
S. Hamzaoui
Y. Bakha*
Affiliation:
Laboratory of Electron Microscopy and Materials Sciences, University of Science and Technology of Oran, P.O. Box 1505, 31000 El-Mnaouer Oran, Algeria
K.M. Bendimerad
Affiliation:
Laboratory of Electron Microscopy and Materials Sciences, University of Science and Technology of Oran, P.O. Box 1505, 31000 El-Mnaouer Oran, Algeria
S. Hamzaoui
Affiliation:
Laboratory of Electron Microscopy and Materials Sciences, University of Science and Technology of Oran, P.O. Box 1505, 31000 El-Mnaouer Oran, Algeria
*
ae-mail: s97soriia@gmail.com
Get access

Abstract

Chemically sprayed aluminum-doped ZnO (1% Al) and undoped ZnO thin films were deposited on glass substrates at T = 420 °C. The thin films are characterized by X-ray diffraction and scanning electron microscopy. The characterization results show that all the compounds are wurtzite with hexagonal structure (0 0 2). They are well crystallized and the grain size is (e = 0.1 μm) for undoped ZnO and (e = 0.13 μm) for Al-doped ZnO. The prepared Al-doped ZnO showed good gas responses to ethanol for two concentrations 200 ppm and 400 ppm. Short response time is given by Al-doped ZnO comparing with undoped ZnO films, its estimate at (~10 s) and recovery time (~15 s) to 200 ppm at T = 220 °C.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 30103
Copyright
© EDP Sciences, 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Fortunato, E., Raniero, L., Silva, L., Goncalves, A., Pimentel, A., Barquinha, P., Aguas, H., Pereira, L., Goncalves, G., Ferreira, I., Elangovan, E., Martins, R., Sol. Energy Mater. Sol. Cells 92, 1605 (2008)CrossRef
Lim, H.J., Lee, D.Y., Oh, Y.J., Sens. Actuators A 125, 405 (2006)CrossRef
Cheng, H.M., Chiu, W.H., Lee, C.H., Tsai, S.Y., Hsieh, W.F., J. Phys. Chem. C 112, 16359 (2008)CrossRef
Zakia, A., Elsimarya, H., Zaghloul, M., Microelectron. J. 38, 426 (2007)CrossRef
Yawale, S.P., Yawale, S.S., Lamdhade, G.T., Sens. Actuators A 135, 388 (2007)CrossRef
Nunes, P., Fortunato, E., Lopes, A., Martins, R., Int. J. Inorg. Mater. 3, 1129 (2001)CrossRef
Gómez, H., Maldonado, A., Castanedo-Pérez, R., Torres-Delgado, G., Mater. Charact. 58, 708 (2007)CrossRef
Yang, Z., Huangb, Y., Chena, G., Guoc, Z., Chengb, S., Huange, S., Sens. Actuators B 140, 549 (2009)CrossRef
Morales, A., Zaldivar, M.H., Pal, U., Opt. Mater. 29, 100 (2006)CrossRef
Fortunato, E., Gonçalves, A., Pimentel, A., Barquinha, P., Gonçalves, G., Pereira, L., Ferreira, I., Martins, R., Appl. Phys. A 96, 197 (2009)CrossRef
Scherrer, P., G. Nachr. 2, 98 (1918)
Senthilkumaar, S., Rajendran, K., Banerjee, S., Chini, T.K., Sengodan, V., Mater. Sci. Semicond. Process. 11, 6 (2008)CrossRef
Zhang, C.Y., Li, X.M., Bian, J.M., Yu, W.D., Gao, X.D., Mater. Sci. Semicond. Process. 10, 215 (2007)CrossRef
Li, Y., Gong, J., Deng, Y., Sens. Actuators A 158, 176 (2010)CrossRef
Liu, H.X., Cui, D., Li, M., Jiang, M., Sens. Actuators B 114, 301 (2006)
Wang, X., Song, J., Liu, J., Lin Wang, Z., Science 316, 102 (2007)CrossRef