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X-valley influence on hot free electron absorption and optical nonlinearities at 10.6 µm in highly doped n-GaAs

Published online by Cambridge University Press:  28 June 2002

G. Shkerdin ,
J. Stiens  and
R. Vounckx
G. Shkerdin
Affiliation:
Institute of Radio Engineering and Electronics of RAS, Vvedensky Square 1, 141120 Fryazino (Moscow reg.), Russia
J. Stiens*
Affiliation:
Vrije Universiteit Brussel, Lab for Micro- and Optoelectronics, Electronics Department, Pleinlaan 2, 1050 Brussels, Belgium
R. Vounckx
Affiliation:
Vrije Universiteit Brussel, Lab for Micro- and Optoelectronics, Electronics Department, Pleinlaan 2, 1050 Brussels, Belgium
*
jstiens@vub.ac.be
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Abstract

A theoretical overview is given about the influence of the presence of the X-valley in highly doped n-GaAs on hot free-electron absorption and optical nonlinearities at 10.6 μm wavelength. The implications of the extension of the quantum-mechanical model from two to three valleys are discussed. For electron temperatures above 600 K the X-valley presence starts to be observed. We reveal that it is difficult to trace the individual contributions of different X-electron related inter- and intravalley absorption and relaxation phenomena and therefore we suggest to introduce an effective X-valley related deformation potential which is a weighted combination of all the X-valley contributions. We discuss how nonlinear optical experiments can be conducted to determine the LL-intervalley and this effective X-valley deformation potential.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 19 , Issue 1 , July 2002 , pp. 29 - 37
Copyright
© EDP Sciences, 2002

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References

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