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Transparent pentacene-based photoconductor: high photoconductivity effect
Published online by Cambridge University Press: 02 September 2010
Abstract
In this paper, the fabrication and characterisation of
pentacene-based photoconductors using indium tin oxide electrodes obtained
by ion beam sputtering are discussed. The photoelectric properties of
pentacene under red (632 nm) and ultraviolet (365 nm) illuminations were
investigated. We have shown that the photocurrent was dependent on the
wavelength, bias voltage and illumination side of the device. Moreover, we
have demonstrated with transparent electrodes that the top contact
configuration yields better performance compared to the bottom contact
configuration. We obtained a maximum photoconductivity gain of approximately
3 × 103 and a faster dynamic response when the photoconductor
with top contact geometry was illuminated with ultraviolet light from the
semiconductor side (top illumination), with a photoconductivity estimated at
10-4 $\Omega^{-1}$ cm-1.
- Type
- Research Article
- Information
- The European Physical Journal - Applied Physics , Volume 51 , Issue 3: Focus on Flexible Organic Electronics , September 2010 , 33207
- Copyright
- © EDP Sciences, 2010
References
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