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Toward SiC-JFETs modelling with temperature dependence

Published online by Cambridge University Press:  06 October 2010

T. Ben Salah ,
H. Morel  and
S. Mtimet
T. Ben Salah*
Affiliation:
Université de Lyon, INSA-Lyon, Lab. Ampère, CNRS, Lyon, France and Electrical System Laboratory, UR03ES05, ENIT, Tunis, Tunisia
H. Morel
Affiliation:
Université de Lyon, INSA-Lyon, Lab. Ampère, CNRS, Lyon, France and Electrical System Laboratory, UR03ES05, ENIT, Tunis, Tunisia
S. Mtimet
Affiliation:
Université de Lyon, INSA-Lyon, Lab. Ampère, CNRS, Lyon, France and Electrical System Laboratory, UR03ES05, ENIT, Tunis, Tunisia
*
tarek.bensalah@gmail.com
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Abstract

This paper focuses on the modelling of a SiC-JFET. The novelty aspect is the dependence on temperature. An accurate model has been used in a previous work and an identification procedure for the main model parameters has been demonstrated. Readers have asked for a more advanced SiC JFET temperature-dependent model. A limitation of the current model versus temperature is verified and explained in order to introduce the necessity of a new temperature dependence model. A more advanced model is then considered and a comparative study between experiment and simulation of the device is established. The characteristics of three SiC JFETs devices are considered from experimental and simulation point-of-view. Simulations results clearly replicate the experimental data at different temperatures and a new validity approach, namely validity maps, is proposed. Validity domains are discussed.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 52 , Issue 2: Focus on Numelec , November 2010 , 20301
Copyright
© EDP Sciences, 2010

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