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Titanium dioxide thin films deposition by direct current hollow cathode magnetron sputtering

Published online by Cambridge University Press:  26 November 2009

D. A. Duarte ,
M. Massi ,
A. S. da Silva Sobrinho ,
H. S. Maciel ,
K. Grigorov  and
L. C. Fontana
D. A. Duarte*
Affiliation:
Technological Institute of Aeronautics, Plasmas and Processes Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
M. Massi
Affiliation:
Technological Institute of Aeronautics, Plasmas and Processes Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
A. S. da Silva Sobrinho
Affiliation:
Technological Institute of Aeronautics, Plasmas and Processes Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
H. S. Maciel
Affiliation:
Technological Institute of Aeronautics, Plasmas and Processes Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
K. Grigorov
Affiliation:
Technological Institute of Aeronautics, Plasmas and Processes Laboratory, 12228-900, S.J. dos Campos, SP, Brazil Institute of Electronics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee, Sofia 1784, Bulgaria
L. C. Fontana
Affiliation:
Santa Catarina State University, Plasmas Physics Laboratory, 89223-100, Joinville, SC, Brazil
*
daduarte@ita.br
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Abstract

Cylindrical hollow cathode magnetron sputtering (HCMS) system was used to deposit crystalline titanium dioxide thin films on p-Si (100) substrates. For a fixed pressure of 0.6 Pa total gas flow rate of 20 sccm and power of 55 W, the influence of the oxygen percentage in the Ar+O2 gas mixture on the structural and surface properties of the films was studied by profilometry, XRD and AFM. The substrates were placed inside the hollow cathode at different positions along its symmetrical axis. Numerical simulations of cathode ion collection probability (CICP) were done in order to compare calculated data with the deposition process characteristics. The results indicate that the deposition rate and the surface roughness gradually decrease with the distance from the bottom of the cathode, due to the decrease of the CICP. The increase of the oxygen percentage in the gas discharge influences directly the deposition rate and decrease the surface roughness. The XRD analyses show that all the films are crystalline with predominant anatase (101) and rutile (110) orientations.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 49 , Issue 1: 17th International Colloquium on Plasma Processes (CIP 2009) , January 2010 , 13107
Copyright
© EDP Sciences, 2009

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References

Yadava, L., Guptab, N.C., Dwivedic, R., Singha, R.S., Microelectron. J. 38, 1226 (2007) CrossRef
Tinoco, J.C., Estrada, M., Iniguez, B., Cerdeira, A., Microelectron. Reliab. 48, 370 (2008) CrossRef
Campbell, S.A., Kim, H.S., Gilmer, D.C., He, B., Ma, T., Gladfelter, W.L., IBM J. Res. Dev. 43, 383 (1999) CrossRef
Lobl, P., Huppertz, M., Mergel, D., Thin Solid Films 251, 72 (1994) CrossRef
Wang, Z., Cohen, S.A., Phys. Plasma 5, 1655 (1999) CrossRef
Toku, H., Pessoa, R.S., Maciel, H.S., Massi, M., Mengui, U.A., Surf. Coat. Technol. 202, 2126 (2008) CrossRef
Duarte, D.A., Massi, M., da Silva Sobrinho, A.S., Tezani, L., Fontana, L.C., Maciel, H.S., ECS Trans. 23, 146 (2009)
Zhou, W., Zhong, X., Wu, X., Yuan, L., Shu, Q., Li, W., Xia, Y., J. Phys. D: Appl. Phys. 40, 222 (2007)
Karuppasamy, A., Subrahmanyam, A., J. Appl. Phys. 101, 064318 (2007) CrossRef
Liu, B., Zhao, X., Zhao, Q., Li, C., He, X., Mater. Chem. Phys. 90, 208 (2005)