Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-24T15:57:36.446Z Has data issue: false hasContentIssue false
  • English
  • Français

Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

Published online by Cambridge University Press:  12 March 2008

E. Ozturk ,
M. K. Bahar  and
I. Sokmen
E. Ozturk*
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
M. K. Bahar
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
I. Sokmen
Affiliation:
Dokuzeylul University, Department of Physics, Izmir, Turkey
*
eozturk@cumhuriyet.edu.tr
Get access

Abstract

For a uniform distribution we have theoretically studied the subband structure of p-type δ-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the δ-doping concentration and the layer thickness. The electronic properties such as the depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrödinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 3 , March 2008 , pp. 195 - 200
Copyright
© EDP Sciences, 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Schubert, E.F., J. Vac. Sci. Technol. A 8, 2980 (1990) CrossRef
Ploog, K., Hauser, M., Fischer, A., Appl. Phys. A 45, 233 (1998) CrossRef
Ioriatti, L., Phys. Rev. B 41, 8340 (1990) CrossRef
Ke, M.L., Rimmer, J.S., Hamilton, B., Evans, J.H., Missous, M., Singer, K.E., Zalm, P., Phys. Rev. B 45, 14114 (1992) CrossRef
Dominguez-Adame, F., Mendez, B., Macina, F., Semicond. Sci. Technol. 9, 263 (1994) CrossRef
Nakazato, K., Blaikie, R.J., Ahmed, H., J. Appl. Phys. 75, 5123 (1994) CrossRef
Osvald, J., Physica E 23, 147 (2004)
L. Chico, F. Garcia-Moliner, V.R. Velasco, Phys. Rev. B 48, 11 427 (1993)
Ozturk, E., Sokmen, I., J. Phys. D: Appl. Phys. 36, 2457 (2003)
Henning, J.C., Ansems, J.P., Semicond. Sci. Technol. 2, 1 (1987) CrossRef
Kortus, J., Monecke, J., Phys. Rev. B 49, 17216 (1994) CrossRef
Zrenner, A., Koch, F., Williams, R.L., Stradling, R.A., Ploog, K., Weinmann, G., Semicond. Sci. Technol. 3, 1203 (1988) CrossRef
Schubert, E.F., Chiu, T.H., Cunningham, J.E., Telland, B., Stark, J.B., J. Electron. Mater. 17, 527 (1988) CrossRef
Schubert, E.F., Fischer, A., Ploog, K., IEEE Trans. Electron Devices 33, 625 (1986) CrossRef
Shibli, S.M., Scolfaro, L.M., Leite, J.R., Mendonça, C.A.C., Plentz, F., Meneses, A., Appl. Phys. Lett. 60, 2895 (1992) CrossRef
Ozturk, E., Ergun, Y., Sari, H., Sokmen, I., Superlattices and Microstructure 28, 35 (2000)
Gaggero-Sager, L.M., Mora-Ramos, M.E., Solid-State Electron. 44, 175 (2000) CrossRef
Gaggero-Sager, L.M., Phys. Stat. Sol. 231, 243 (2002) 3.0.CO;2-0>CrossRef
Rosa, A.L., Scolfaro, L.M.R., Sipahi, G.M., Enderlein, R., Leite, J.R., Microelectron. Engineer. 43, 489 (1998) CrossRef
Gaggero-Sager, L.M., Perez-Alvarez, R., J. Appl. Phys. 79, 3351 (1996) CrossRef
Degani, M.H., Phys. Rev. B 44, 5580 (1991) CrossRef
Koenraad, P.M., Blom, F.A.P., Langerak, C.J.G.M., Perenboom, M.R. LeA.J., Singleton, J., Spermon, S.J.R.M., Van der Vleuten, W.C., Voncken, A.P.J., Wolter, J.H., Semicond. Sci. Tech. 5, 861 (1990) CrossRef
Rodriguez-Vargas, I., Mora-Ramos, M.E., Superlattices and Microstructure 40, 100 (2006) CrossRef
Hirai, M., Ohnishi, H., Fujita, K., Vaccaro, P., Watanabe, T., J. Cryst. Growth 150, 209 (1995) CrossRef
Woolf, D.A., Rose, K.C., Morris, S.J., Westwood, D.I., Rumberg, J., Reinhardt, F., Richer, W., Williams, R.H., J. Cryst. Growth 150, 197 (1995) CrossRef
Lida, T., Makita, Y., Kimura, S., Kawasumi, Y., Yamada, A., Uekusa, S., Tsukamoto, T., J. Cryst. Growth 150, 236 (1995)
Li, N.Y., Dong, H.K., Tu, C.W., Geva, M., J. Cryst. Growth 150, 246 (1995) CrossRef
Gaggero-Sager, L.M., Perez-Alvarez, R., J. Appl. Phys. 78, 4566 (1995) CrossRef
Nakagawa, K., van Gorkum, A.A., Shiraki, Y., Appl. Phys. Lett. 57, 1869 (1989) CrossRef