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Subband structure and band bending in symmetric modulation-doped double quantum wells
Published online by Cambridge University Press: 21 December 2004
Abstract
We have calculated the subband structure and confinement potential
of modulation-doped Ga$_{1-x}$AlxAs-GaAs symmetric double quantum wells
a function of the doping concentration. Electronic properties of this
structure are determined by solving the Schrödinger and Poisson
equations self-consistently. To understand the exchange correlation
potential effects on the band bending and subband populations, this
potential has been included in the calculation at 0 K and, at room
temperature. We find that at low doping concentrations the effect of the
exchange correlation potential is more pronounced on the subband
populations.
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- Research Article
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- © EDP Sciences, 2005
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