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Structural and electrical characterization of n+-type ion-implanted 6H-SiC

Published online by Cambridge University Press:  15 July 2004

D. Goghero ,
F. Giannazzo ,
V. Raineri ,
P. Musumeci  and
L. Calcagno
D. Goghero
Affiliation:
CNR-IMM Sezione di Catania, Stradale Primosole 50-95121 Catania, Italy
F. Giannazzo
Affiliation:
CNR-IMM Sezione di Catania, Stradale Primosole 50-95121 Catania, Italy Dipartimento di Fisica ed Astronomia, Via S. Sofia 64-95123 Catania, Italy
V. Raineri*
Affiliation:
CNR-IMM Sezione di Catania, Stradale Primosole 50-95121 Catania, Italy
P. Musumeci
Affiliation:
Dipartimento di Fisica ed Astronomia, Via S. Sofia 64-95123 Catania, Italy
L. Calcagno
Affiliation:
Dipartimento di Fisica ed Astronomia, Via S. Sofia 64-95123 Catania, Italy
*
Vito.raineri@imm.cnr.it
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Abstract

The influence of different annealing procedures on both structural and electrical characteristics is investigated for 6H-SiC implanted with nitrogen in the doping concentration range of 1 × 1018 − 1 × 1020 cm−3 by Transmission Electron Microscopy and Scanning Capacitance Microscopy. The poor electrical activation of N+ ions is correlated to the formation of a high density of precipitates in the implanted layer when increasing the doping concentration. A rapid thermal pre-annealing combined with conventional furnace annealing is effective to improve the active fraction but the presence of the precipitates overwhelms this effect for high doping concentration (> 1 × 1019 cm−3).

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 239 - 242
Copyright
© EDP Sciences, 2004

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