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Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
Published online by Cambridge University Press: 28 March 2008
Abstract
In this work, we study the optical interband transitions of InP on silicon
(InP/Si) and on porous silicon (InP/PSi) substrates grown by molecular beam
epitaxy (MBE). Spectroscopic ellipsometry for photon energies from 2 to 5 eV
is used to determine the InP/Si and InP/PSi complex refractive index and
thickness. Bruggeman effective medium approximation (EMA) associated to the
Cauchy model are used to model the experimental ellipsometric data. We have
found that the E1 and E1 + $\Delta _{1}$ transition energies
of InP/Si and InP/PSi shift to low energies compared to bulk InP. This
effect is interpreted as a result of the strain relaxation of the InP layers
grown respectively on Si and porous Si substrates.
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- © EDP Sciences, 2008