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Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry

Published online by Cambridge University Press:  28 March 2008

M. Lajnef ,
N. Ben Sedrine ,
J. C. Harmand ,
L. Travers ,
H. Ezzaouia  and
R. Chtourou
M. Lajnef*
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
N. Ben Sedrine
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
J. C. Harmand
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
L. Travers
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
H. Ezzaouia
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
R. Chtourou
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
*
Mohamed.lajnef@yahoo.fr
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Abstract

In this work, we study the optical interband transitions of InP on silicon (InP/Si) and on porous silicon (InP/PSi) substrates grown by molecular beam epitaxy (MBE). Spectroscopic ellipsometry for photon energies from 2 to 5 eV is used to determine the InP/Si and InP/PSi complex refractive index and thickness. Bruggeman effective medium approximation (EMA) associated to the Cauchy model are used to model the experimental ellipsometric data. We have found that the E1 and E1 + $\Delta _{1}$ transition energies of InP/Si and InP/PSi shift to low energies compared to bulk InP. This effect is interpreted as a result of the strain relaxation of the InP layers grown respectively on Si and porous Si substrates.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 42 , Issue 2 , May 2008 , pp. 99 - 102
Copyright
© EDP Sciences, 2008

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