Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-19T01:22:43.048Z Has data issue: false hasContentIssue false
  • English
  • Français

Solar blind AlGaN photodetectors with a very high spectral selectivity

Published online by Cambridge University Press:  18 January 2006

J.-Y. Duboz ,
N. Grandjean ,
A. Dussaigne ,
M. Mosca ,
J.-L. Reverchon ,
P. G. Verly  and
R. H. Simpson
J.-Y. Duboz*
Affiliation:
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
N. Grandjean
Affiliation:
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
A. Dussaigne
Affiliation:
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
M. Mosca
Affiliation:
THALES Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
J.-L. Reverchon
Affiliation:
THALES Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
P. G. Verly
Affiliation:
Institute for Microstructural sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
R. H. Simpson
Affiliation:
Institute for Microstructural sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
*
jyd@crhea.cnrs.fr
Get access

Abstract

Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 × 104, and better than 5 × 104, measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 33 , Issue 1 , January 2006 , pp. 5 - 7
Copyright
© EDP Sciences, 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Gil, B., Group III Nitride Semiconductor Compounds: Physics and Application (Clarendon Press, Oxford, 1998); E. Munoz, E. Monroy, J.L. Pau, F. Calle, F. Omnes, P. Gibart, J. Phys.-Cond. Matter 32, 7115 (2001); F. Omnes, E. Monroy, Nitride Semiconductors, Handbook on Materials and Devices, edited by P. Ruterana, M. Albrecht, J. Neugebauer (Wiley-Vch, Publishers, 2003), Chap. 13
Hirano, A., Pernot, C., Iwaya, M., Detchprohm, T., Amano, H., Akasaki, I., Phys. Status Solidi A 188, 293 (2001) 3.0.CO;2-D>CrossRef
Long, J.P., Varadaraajan, S., Matthews, J., Schetzina, J.F., Opto-electr. Rev. 10, 251 (2002)
Collins, C.J., Chowdhurry, U., Wong, M.M., Yang, B., Beck, A.L., Dupuis, R.D., Campbell, J.C., Appl. Phys. Lett. 80, 3754 (2002) CrossRef
Mosca, M., Reverchon, J.-L., Grandjean, N., Omnes, F., Duboz, J.-Y., Ribet, I., Tauvy, M., Mat. Res. Soc. Symp. Proc. 764, 315 (2003)
Monroy, E., Calle, F., Pau, J.L., Sanchez, F.J., Munoz, E., Omnes, F., Beaumont, B., Gibard, P., J. Appl. Phys. 88, 2081 (2000) CrossRef
Biyicli, N., Aytur, O., Kimugin, I., Tut, T., Ozbay, E., Appl. Phys. Lett. 81, 3272 (2002) CrossRef
J.Y. Duboz, N. Grandjean, F. Omnes, M. Mosca, J.L. Reverchon, Appl. Phys. Lett. 86, (2005) (to be published)
Waldorf, A.J., Dobrowolski, J.A., Sullivan, B.T., Plante, L.M., Appl. Opt. 28, 5583 (1993) CrossRef