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Raman study on dislocation in high Al content AlxGa1−xN

Published online by Cambridge University Press:  29 March 2012

X. Pan ,
X.L. Wang ,
H.L. Xiao ,
C.M. Wang ,
C. Feng ,
L.J. Jiang ,
H. Yin  and
H. Chen
X. Pan*
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
X.L. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
H.L. Xiao
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
C.M. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
C. Feng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
L.J. Jiang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
H. Yin
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
H. Chen
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
*
a e-mail: xpan@semi.ac.cn
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Abstract

The high Al content AlGaN epilayers have been obtained by metalorganic chemical vapor deposition (MOCVD), and the optical property has been investigated by photoluminescence (PL) spectroscopy. Longitudinal-optic (LO) phonon mode has been studied by Raman scattering. Further analysis shows that the edge dislocation is an important factor influencing optical quality of AlGaN epilayers, and it also shows that the correlation between the A1 (LO) polar modes and the edge dislocation is intensive, which may be expected to become a characterization method of the related crystal defects.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 58 , Issue 1 , April 2012 , 10102
Copyright
© EDP Sciences, 2012

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