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Photoluminescence study of nitrogen effects on confined states in GaAs1−xNxGaAs quantum wells
Published online by Cambridge University Press: 12 June 2009
Abstract
Modulation doped heterostructures
GaAs/GaAs$_{1-x}$Nx/GaAs/Al0.3Ga0.7As:δSi
with GaAs$_{1-x}$
Nx Quantum Wells (QW) with different nitrogen
contents x have been grown by molecular beam epitaxy and investigated by
photoluminescence (PL) spectroscopy. We have found that at low temperature
the photoluminescence spectra are essentially formed by two structures
observed at 1.51 eV and 1.47 eV attributed to excitonic transitions in GaAs
layer, and in GaAs$_{1-x}$
Nx QW, respectively. The Band
Anticrossing Model (BAC) has been adopted in order to confirm the nature of
the transitions in GaAs$_{1-x}$
Nx QW's. The band structure of
$\delta $
-doped
GaAs/GaAs$_{1-x}$
Nx/GaAs/Al0.3Ga0.7As:δSi has
been studied theoretically by using the finite differences method to
self-consistently and simultaneously solve Schrödinger and Poisson
equations written within the Hartree approximation. We find in this way good
agreement between our measured and our calculated values for the transition
energies in our GaAs$_{1-x}$
Nx QW's.
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- Research Article
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- Copyright
- © EDP Sciences, 2009
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