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Phase segregation in Pb:GeSbTe chalcogenide system

Published online by Cambridge University Press:  19 December 2007

J. Kumar ,
M. Ahmad ,
R. Chander ,
R. Thangaraj  and
T. S. Sathiaraj
J. Kumar
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar-143005, India
M. Ahmad
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar-143005, India
R. Chander
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar-143005, India
R. Thangaraj*
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar-143005, India
T. S. Sathiaraj
Affiliation:
Department of Physics, University of Botswana, Botswana
*
rthangaraj@rediffmail.com
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Abstract

Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in Pb0Ge20Sb24Te56, Pb1.6Ge19Sb26Te54, Pb3Ge17Sb28Te53 and Pb5Ge12Sb28Te55 respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 1 , January 2008 , pp. 13 - 18
Copyright
© EDP Sciences, 2007

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