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A new p+-i-n+ photodiode SPICE model for CMOS pixel applications

Published online by Cambridge University Press:  12 March 2008

R. Negru ,
Y. Bonnassieux ,
S. Tchakarov  and
P. R. i Cabarrocas
R. Negru*
Affiliation:
LPICM École Polytechnique, 91128 Palaiseau Cedex, France
Y. Bonnassieux
Affiliation:
LPICM École Polytechnique, 91128 Palaiseau Cedex, France
S. Tchakarov
Affiliation:
LPICM École Polytechnique, 91128 Palaiseau Cedex, France
P. R. i Cabarrocas
Affiliation:
LPICM École Polytechnique, 91128 Palaiseau Cedex, France
*
razvan.negru@polytechnique.edu

Abstract

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In this paper we discuss and model the effects of the density of defects in hydrogenated amorphous silicon from an electronics point of view. To this end, we have created a SPICE model that accounts for the two main field effects, Poole-Frenkel and tunnel, responsible for the leakage current. The comparison between our model and the experimental data shows that our approach allows a quick evaluation of the quality of the device with no need to run a complete steady state measurement. Also, we have validated our SPICE photodiode model by implementing it into a three CMOS simple pixel structure.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 3 , March 2008 , pp. 205 - 213
Copyright
© EDP Sciences, 2008

References

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