Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-27T06:51:59.850Z Has data issue: false hasContentIssue false

A new coherent infrared image converter

Published online by Cambridge University Press:  19 November 2002

B. G. Salamov*
Affiliation:
Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Ankara, Turkey
A. Günen
Affiliation:
Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Ankara, Turkey
Get access

Abstract

A new model of incoherent-to-coherent IR image converter based on a GaAs photoconductor (PC) joined to an electro-optic (EO) Bi12SiO20 crystal has been analyzed theoretically and experimentally. The possibility of field transfer from the PC to the EO crystal under the infrared (IR) radiation sufficient for realization of the EO (Pockels) effect in the EO crystal was assessed. Based on the electric field parameters and the parameters of the PC and EO crystal, the threshold sensitivity of the converter was estimated. The experimental PC-EO crystal structure by which IR-radiation (0.9–1.5 μm) was converted into the coherent visible radiation was obtained on the basis of theoretical calculations. The limiting resolution of readout image was about 10 lp/mm. The measured threshold sensitivity of the converter, 5 × 10−4 W/cm2, was found to be in the limits of theoretical estimation. The results indicate that this device has the potential for use in a high-speed, high-contrast optically addressed spatial light modulators.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Iwasa, S., Feinleib, J., Opt. Eng. 13, 235 (1974) CrossRef
Sprague, R.A., Nisenson, P., Opt. Eng. 17, 256 (1978) CrossRef
Crenot, M., Pergrale, J., Donjon, J., Marie, G., Appl. Phys. Lett. 21, 83 (1972)
M. Lains, A. Glass, Segnetoelectriki i rodstvenniye im materialy (Moscow: Mir, 1981), p. 342 (in Russian)
Lipson, S., Nisenson, P., Appl. Opt. 13, 2052 (1974) CrossRef
Ballman, A.A., J. Cryst. Growth 1, 37 (1967) CrossRef
Slobadnic, A.J., J. Appl. Phys. 43, 3278 (1972) CrossRef
Lauer, R.B., J. Appl. Lett. 17, 1178 (1970) CrossRef
Osugi, Y., Honda, A., Minemoto, T., Jpn. J. Opt. 25, 48 (1996) (in Japanese)
Bitou, Y., Minemoto, T., OSA Trends Opt. Phot. 14, 147 (1997)
Sepaphin, B.O., Bottka, N., Phys. Rev. 139, 560 (1965) CrossRef
R.H. Kingston, F.J. Leonberger, IEEE J. Quantum Electron. QE-19, 1443 (1983)
Salamov, B.G., Lebedava, N.N., Çolakoglu, K., Imaging Sci. J. 47, 81 (1999) CrossRef
Zeinally, A.Kh., Lebedeva, N.N, Pazitskii, L.G., Salamov, B.G., J. Photogr. Sci. 39, 114 (1991) CrossRef
Lebedeva, N.N., Salamov, B.G., Akinoglu, B.G., Allakhverdiev, K.R., J. Phys. D 27, 1229 (1994) CrossRef
R.K. Willarson, A.C. Beer, Semiconductors and Semimetals (Academic, San Diego, Calif. (1998), Vol. 26, pp. 102-110
Minemoto, T., Suemoto, Y., Fujita, S., Jpn. J. Appl. Phys. 16, 1683 (1977) CrossRef
Yu.S. Kuzminov, B.Yu. Ligints, Kristallografiya 14, 363 (1969)
Bitou, Y., Minemoto, T., Appl. Opt. 37, 1377 (1998) CrossRef
Bitou, Y., Minemoto, T., Appl. Opt. 37, 4347 (1998) CrossRef
Termann, L.M., Solid-State Electron. 5, 282 (1962)
V.A. Bonch-Bruevich, S.G. Kalashnikov, Semiconductor Physics (Moscow: Mir 1977), p. 231 (in Russian)
V.S. Sonin, A.S. Vasilevskaya, Elektro-Opticheskiye kristally (Moscow: Atomizdat 1971), p. 96 (in Russian)
Tharmalingam, K., Phys. Rev. 130, 2204 (1963) CrossRef
Y. Bitou, T. Minemoto, Appl. Opt. 37, 8227 1998
Y. Nagao, Y. Mimura, Extended Abstracts of the 50th Autumn Meeting of the Japan Society of Applied Physics, 1990, Vol. 28, p-ZD3
Osugi, Y., Honda, A., Hamajima, A., Toyoda, S., Kozuka, Y., Minemoto, T., Jpn. J. Opt. 21, 237 (1992)
Iwasa, S., Appl. Opt. 15, 1418 (1976) CrossRef