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Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

Published online by Cambridge University Press:  31 January 2009

M. Moret ,
S. Ruffenach ,
O. Briot  and
B. Gil
M. Moret
Affiliation:
Université Montpellier 2, Groupe d'Étude des Semiconducteurs, UMR-CNRS 5650, Case Courrier 74, 34095 Montpellier Cedex 5, France
S. Ruffenach
Affiliation:
Université Montpellier 2, Groupe d'Étude des Semiconducteurs, UMR-CNRS 5650, Case Courrier 74, 34095 Montpellier Cedex 5, France
O. Briot
Affiliation:
Université Montpellier 2, Groupe d'Étude des Semiconducteurs, UMR-CNRS 5650, Case Courrier 74, 34095 Montpellier Cedex 5, France
B. Gil*
Affiliation:
Université Montpellier 2, Groupe d'Étude des Semiconducteurs, UMR-CNRS 5650, Case Courrier 74, 34095 Montpellier Cedex 5, France
*
gil@ges.univ-montp2.fr

Abstract

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We report the growth of indium-rich InGaN alloys by metal-organic vapour phase epitaxy, using ammonia, trimethylgallium and trimethylindium as precursors. Compared to indium nitride, our alloy samples present substantial photoluminescence robustness with temperature. The analysis of the optical properties of these samples versus temperature indicates the existence of two non radiative recombination channels: one with a thermal activation temperature of 77 K and another one with an activation temperature ranging from 300 K for InN up to 640 K for In0.72Ga0.28N. The latter competes with the former at low temperatures whilst the former rules the optical properties at ambient conditions.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 45 , Issue 2 , February 2009 , 20305
Copyright
© EDP Sciences, 2009

References

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