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Magnetoresistance studies and optimization of deposition parameters of pulsed electron deposited La0.6Pb0.4Mn0.8Ru0.2O3 thin films

Published online by Cambridge University Press:  11 August 2011

B. Singh ,
S.S. Manoharan ,
S.-H. Lim  and
L.G. Salamanca-Riba
B. Singh*
Affiliation:
Centre of Material Sciences, University of Allahabad, Allahabad 211002, India
S.S. Manoharan*
Affiliation:
Materials Chemistry Laboratory, Indian Institute of Technology Kanpur, Kanpur 208016, India
S.-H. Lim
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742-4111,USA
L.G. Salamanca-Riba
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742-4111,USA
*
ae-mail: brajendr@gmail.com
be-mail: ssundar@iitk.ac.in
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Abstract

We document the magnetotransport properties of multicomponent La0.6Pb0.4Mn0.8Ru0.2O3 oxide thin films deposited using Pulsed Electron Deposition. This is a model composition in this series, which shows adequate hole transport aided by the presence of both Mn4+ and Ru5+ ions with similar t2gand eg parentage. The optimized metal to insulator transition temperature (Tmit) of the film has been found to be ~298 K and the magnetoresistance (—MR%) ratio of about —65% near the Tmit was observed for the La0.6Pb0.4Mn0.8Ru0.2O3 thin films. High-Resolution Transmission Electron Microscopy (HRTEM) studies reveal a good epitaxial growth along the (0 0 1) direction on LaAlO3 (LAO) substrate, with the width of the rocking curves (ω scans) <0.6°.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 2: International Symposium on Flexible Organic Electronics 2010 (ISFOE) , August 2011 , 20301
Copyright
© EDP Sciences, 2011

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