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Low frequency noise in intrinsic low pressure chemical vapourdeposited polysilicon resistors*

Published online by Cambridge University Press:  15 September 1998

C. A. Dimitriadis ,
J. Brini  and
G.Kamarinos
C. A. Dimitriadis
Affiliation:
Department of Physics, University of Thessaloniki, 540 06 Thessaloniki, Greece
J. Brini*
Affiliation:
Laboratoire de Physique des Composants Semi-conducteurs, ENSERG, 23 rue des Martyrs, B.P. 257, 38016 Grenoble, Cedex 1, France
G.Kamarinos
Affiliation:
Laboratoire de Physique des Composants Semi-conducteurs, ENSERG, 23 rue des Martyrs, B.P. 257, 38016 Grenoble, Cedex 1, France
*
brini@enserg.fr
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Abstract

Low-frequency noise measurements were performed on intrinsic low pressure chemical vapor deposited polycrystalline silicon resistors. The current noise exhibits a transition from 1/f to 1/f0.6 behavior with the resistors biased in the linear region. The origin of the noise is related to carrier density fluctuation between conduction band and gap states consisting of deep states lying close to midgap with uniform energy distribution and exponential band tails. From analysis of the experimental data, the quality of the material is characterized with respect to the deposition pressure. When the resistors are biased in the non-linear regime, an additional noise is observed which is attributed to the temperature rise due to Joule-induced heating within the samples.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 3 , Issue 3 , September 1998 , pp. 283 - 285
Copyright
© EDP Sciences, 1998

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Footnotes

*

This paper was presented at D.E.S. 97 (Poitiers, France, September 4 and 5 1997).

References

* This paper was presented at D.E.S. 97 (Poitiers, France, September 4 and 5 1997).