Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Uedono, Akira
Yonenaga, Ichiro
Watanabe, Tomohito
Kimura, Shogo
Oshima, Nagayasu
Suzuki, Ryoichi
Ishibashi, Shoji
and
Ohno, Yutaka
2013.
Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams.
Journal of Applied Physics,
Vol. 114,
Issue. 8,
Belabbas, I.
Chen, J.
and
Nouet, G.
2014.
Electronic structure and metallization effects at threading dislocation cores in GaN.
Computational Materials Science,
Vol. 90,
Issue. ,
p.
71.
Yonenaga, I.
Ohno, Y.
Yao, T.
and
Edagawa, K.
2014.
Optical and electrical properties of dislocations in plastically deformed GaN.
Journal of Crystal Growth,
Vol. 403,
Issue. ,
p.
72.
Iglesias, V.
Porti, M.
Couso, C.
Wu, Q.
Claramunt, S.
Nafria, M.
Miranda, E.
Domingo, N.
Bersuker, G.
and
Cordes, A.
2015.
Threading dislocations in III-V semiconductors: Analysis of electrical conduction.
p.
CD.4.1.
Iglesias, V.
Wu, Q.
Porti, M.
Nafría, M.
Bersuker, G.
and
Cordes, A.
2015.
Monitoring defects in III–V materials: A nanoscale CAFM study.
Microelectronic Engineering,
Vol. 147,
Issue. ,
p.
31.
Porti, M.
Iglesias, V.
Wu, Q.
Couso, C.
Claramunt, S.
Nafria, M.
Cordes, A.
and
Bersuker, G.
2016.
CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects.
IEEE Transactions on Nanotechnology,
Vol. 15,
Issue. 6,
p.
986.
Couso, C.
Iglesias, V.
Porti, M.
Claramunt, S.
Nafria, M.
Domingo, N.
Cordes, A.
and
Bersuker, G.
2016.
Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements.
IEEE Electron Device Letters,
Vol. 37,
Issue. 5,
p.
640.
Chang, Alexander S.
Li, Bingjun
Wang, Sizhen
Frisone, Sam
Goldman, Rachel S.
Han, Jung
and
Lauhon, Lincoln J.
2022.
Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices.
Nano Energy,
Vol. 102,
Issue. ,
p.
107689.
Ishikawa, Yukari
Sugawara, Yoshihiro
Yokoe, Daisaku
Sato, Koji
Yao, Yongzhao
Watanabe, Kenta
and
Okawa, Takashi
2023.
Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes.
Journal of Materials Science,
Vol. 58,
Issue. 22,
p.
9221.