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In-situ microscopy study of nanocavity shrinkage in Siunder ion beam irradiation

Published online by Cambridge University Press:  11 December 2002

M.-O. Ruault ,
M. C. Ridgway ,
F. Fortuna ,
H. Bernas  and
J. S. Williams
M.-O. Ruault*
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR CNRS-Université Paris XI, Orsay, France
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
F. Fortuna
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR CNRS-Université Paris XI, Orsay, France
H. Bernas
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR CNRS-Université Paris XI, Orsay, France
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
*
ruault@csnsm.in2p3.fr
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Abstract

We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si. 


Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 23 , Issue 1 , July 2003 , pp. 39 - 40
Copyright
© EDP Sciences, 2003

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