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The influence of pressure on the growth of InAlN/AlN/GaN heterostructure

Published online by Cambridge University Press:  01 March 2012

Y. Bi ,
X.L. Wang ,
C.M. Wang ,
J.P. Li ,
H.X. Liu ,
H. Chen ,
H.L. Xiao ,
C. Feng  and
L.J. Jiang
Y. Bi*
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
X.L. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
C.M. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
J.P. Li
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H.X. Liu
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H. Chen
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H.L. Xiao
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
C. Feng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
L.J. Jiang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
*
ae-mail: ybi@semi.ac.cn
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Abstract

The influence of pressure on the MOCVD grown InAlN/AlN/GaN heterostructure has been investigated by high-resolution X-ray diffraction, Hall measurement and atomic force microscopy. High pressure is beneficial to increase indium incorporation efficiency. The electrical properties of InAlN/AlN/GaN heterostructure become better with the pressure decreasing from 100 Torr to 50 Torr. Indium droplets tend to form on the InAlN surface at high pressure. The edge of the indium droplet is the Al-rich region while the interior is the In-rich region, demonstrated by the phase-contrast mode. Phase contrast across the V-defect is strong on the surface of InAlN grown at low pressure (50 Torr) whereas it is not evident at high pressure (100 Torr), indicating that large stress in the InAlN film will enhance the compositional variation.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 57 , Issue 3 , February 2012 , 30103
Copyright
© EDP Sciences, 2012

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References

Kuzmik, J., IEEE Electron Device Lett. 22, 510 (2001)CrossRef
Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., J. Vac. Sci. Technol. B 21, 888 (2003)CrossRef
Joh, J., Del Alamo, J.A., in IEDM Tech. Dig., San Francisco, CA, 2006, p. 415 Google Scholar
Carlin, J.F., Ilegems, M., Appl. Phys. Lett. 83, 668 (2003)CrossRef
Lorenz, K., Franco, N., Alves, E., Watson, I.M., Martin, R.W., O’Donnell, K.P., Phys. Rev. Lett. 97, 85501 (2006)CrossRef
Xie, J., Ni, X., Wu, M., Leach, J.H., Özgür, Ü., Morkoç, H., Appl. Phys. Lett. 91, 132116 (2007)CrossRef
Kuzmik, J., Semicond. Sci. Technol. 17, 540 (2002)CrossRef
Medjdoub, F., Carlin, J.F., Gaquiere, C., Grandjean, N., Kohn, E., Open Electr. Electron. Eng. J. 2, 1 (2008)CrossRef
Gonschorek, M., Carlin, J.F., Feltin, E., Py, M.A., Grandjean, N., Appl. Phys. Lett. 89, 062106 (2006)CrossRef
Butté, R., Carlin, J.F., Feltin, E., Gonschorek, M., Nicolay, S., Christmann, G., Simeonov, D., Castiglia, A., Dorsaz, J., Buehlmann, H.J., J. Phys. D: Appl. Phys. 40, 6328 (2007)CrossRef
Hums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E., Appl. Phys. Lett. 90, 022105 (2007)CrossRef
Dadgar, A., Schulze, F., Bläsing, J., Diez, A., Krost, A., Neuburger, M., Kohn, E., Daumiller, I., Kunze, M., Appl. Phys. Lett. 85, 5400 (2004)CrossRef
Chen, Z.T., Sakai, Y., Egawa, T., Appl. Phys. Lett. 96, 191911 (2010)CrossRef
Carlin, J.-F., Zellweger, C., Dorsaz, J., Nicolay, S., Christmann, G., Feltin, E., Butté, R., Grandjean, N., Phys. Status Solidi B 242, 2326 (2005)CrossRef
Zhang, Y.F., Singh, J., J. Appl. Phys. 85, 587 (1999)CrossRef
Cao, Y., Jena, D., Appl. Phys. Lett. 90, 182112 (2007)CrossRef
Minj, A., Cavalcoli, D., Cavallini, A., Appl. Phys. Lett. 97, 132114 (2010)CrossRef
Vilalta-Clemente, A., Poisson, M.A., Behmenburg, H., Giesen, C., Heuken, M., Ruterana, P., Phys. Status Solidi A 207, 1105 (2010)CrossRef
GarcÍa, R., Magerle, R., Perez, R., Nat. Mater. 6, 405 (2007)CrossRef
Jung, M., Choi, J.W., Ultramicroscopy 110, 670 (2010)CrossRef
Kehagias, T., Dimitrakopulos, G.P., Kioseoglou, J., Kirmse, H., Giesen, C., Heuken, M., Georgakilas, A., Neumann, W., Karakostas, T., Komninou, P., Appl. Phys. Lett. 95, 071905 (2009)CrossRef
Gorczyca, I., Lepkowski, S.P., Suski, T., Christensen, N.E., Svane, A., Phys. Rev. B 80, 075202 (2009)CrossRef
Gorczyca, I., Suski, T., Kamińska, A., Staszczak, G., Schenk, H.P.D., Christensen, N.E., Svane, A., Phys. Status Solidi A 207, 1369 (2010)CrossRef