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Imaging of spontaneous emission from 980 nm tapered lasers with windowed N-contacts

Published online by Cambridge University Press:  15 July 2004

S. Bull ,
J. G. Wykes ,
A. V. Andrianov ,
J. J. Lim ,
L. Borruel ,
S. Sujecki ,
S. C. Auzanneau ,
M. Calligaro ,
M. Krakowski  and
I. Esquivias
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S. Bull*
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
J. G. Wykes
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
A. V. Andrianov
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK A.F. Ioffe Physical Technical Institute, 26 Politehnicheskaya, St. Petersburg, 194021, Russia
J. J. Lim
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
L. Borruel
Affiliation:
Departamento de Tecnología Fotónica, Universidad Politécnica de Madrid, 28040 Madrid, Spain
S. Sujecki
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
S. C. Auzanneau
Affiliation:
THALES Research & Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
M. Calligaro
Affiliation:
THALES Research & Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
M. Krakowski
Affiliation:
THALES Research & Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
I. Esquivias
Affiliation:
Departamento de Tecnología Fotónica, Universidad Politécnica de Madrid, 28040 Madrid, Spain
E. C. Larkins
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
*
steve.bull@nottingham.ac.uk
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Abstract

Experimental measurements of the spatial distribution of the spontaneous emission produced inside the cavity of a 4° 980 nm tapered laser are presented and compared with the results of a 2.5 D half-space, hot-cavity simulation. A custom device with a windowed n-contact was designed and fabricated for this work. The effectiveness of this windowed contact was investigated and appears to be satisfactory. The measurement system for photo- and electroluminescence microscopy imaging was quantitatively calibrated with an error of < ±15%. Good agreement between the experimental and simulated results are presented, with an error of ~ 6% in the carrier density at the output facet.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 455 - 459
Copyright
© EDP Sciences, 2004

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References

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