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High quality multicrystalline silicon grown by multi-stage solidification control method

Published online by Cambridge University Press:  15 July 2004

S. Nara ,
T. Sekiguchi  and
J. Chen
S. Nara
Affiliation:
Steel Research Laboratory, JFE Steel Corporation Mizushima, Kurashiki 712–8511, Japan
T. Sekiguchi*
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science 1-2-1, Tsukuba 305–0047, Japan
J. Chen
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science 1-2-1, Tsukuba 305–0047, Japan State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P.R. China
*
SEKIGUCHI.Takashi@nims.go.jp
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Abstract

We have developed a method for growing high quality multicrystalline silicon (mc-Si) ingots for high efficiency solar cells. Grain size of the mc-Si wafers was controlled by the multi-stage solidification method. Impurity concentrations in the mc-Si ingots were also reduced by several ways. The efficiency of mc-Si solar cells produced from such mc-Si wafers has reached 18.3% with a cell area of 25 cm2. In this paper we have investigated this high quality mc-Si by means of electron-beam induced current (EBIC), transmission electron microscopy combined with energy-dispersive X-ray analysis (TEM-EDX), and secondary-ion mass-spectroscopy (SIMS). EBIC results revealed that grain boundaries in MUST mc-Si were electrically inactive at room temperature. No metal impurities were detected at these grain boundaries.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 389 - 392
Copyright
© EDP Sciences, 2004

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