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Experimental study of the delayed threshold phenomenon in a class-A VECSEL

Published online by Cambridge University Press:  30 March 2012

A. El Amili*
Affiliation:
Laboratoire Aimé-Cotton, CNRS-Université Paris Sud 11, 91405 Orsay Cedex, France
G. Gredat
Affiliation:
Laboratoire Aimé-Cotton, CNRS-Université Paris Sud 11, 91405 Orsay Cedex, France
M. Alouini
Affiliation:
Institut de Physique de Rennes, UMR CNRS-Université de Rennes I 6251, 35042 Rennes Cedex, France
I. Sagnes
Affiliation:
Laboratoire de Photonique et Nanostructures, CNRS, 91460 Marcoussis, France
F. Bretenaker
Affiliation:
Laboratoire Aimé-Cotton, CNRS-Université Paris Sud 11, 91405 Orsay Cedex, France

Abstract

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An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a time delay in the vicinity of the threshold. The evolution of this delay is measured as a function of the modulation frequency and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.

Type
Fast Track Article
Copyright
© EDP Sciences, 2012

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