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Etch pits on (hk0) and (hh${\sf \ell}$) silicon surfaces. Experimental shapes and simulations

Published online by Cambridge University Press:  12 June 2009

C. R. Tellier
C. R. Tellier*
Affiliation:
FEMTO-ST Institute, Frequency and Time Department, 26 chemin de l'épitaphe, 25030 Besançon Cedex, France
*
ctellier@ens2m.fr
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Abstract

The present work is concerned with the development of etch pits on (hk0) and (hh$\ell$) silicon surfaces immersed in various etchants. Final shapes of small etch pits are found to be bounded by {111} facets solely. The orientation dependence of etching shapes is explained in terms of a kinematic and tensorial model involved in the simulator TENSOSIM. An agreement between experimental and theoretical etching shapes is observed showing that the simulator can generate quite accurate 3D etching shapes for pits blocked by limiting facets. After a fair adjustment of the database the simulator derives also etching shapes close to experimental shapes of large pits.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 47 , Issue 3 , September 2009 , 30303
Copyright
© EDP Sciences, 2009

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