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Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surface

Published online by Cambridge University Press:  26 February 2010

H. Gong ,
X. Hao ,
W. Xia ,
Y. Wu  and
X. Xu
H. Gong
Affiliation:
State Key Lab. of Crystal Materials, Shandong University, Shanda South Road 27, 250100, Jinan, P.R. China
X. Hao*
Affiliation:
State Key Lab. of Crystal Materials, Shandong University, Shanda South Road 27, 250100, Jinan, P.R. China
W. Xia
Affiliation:
Shandong Huaguang Optoelectronics Company, Ltd., Tianchen Road 1835, 250101, Jinan, P.R. China
Y. Wu
Affiliation:
State Key Lab. of Crystal Materials, Shandong University, Shanda South Road 27, 250100, Jinan, P.R. China
X. Xu
Affiliation:
State Key Lab. of Crystal Materials, Shandong University, Shanda South Road 27, 250100, Jinan, P.R. China Shandong Huaguang Optoelectronics Company, Ltd., Tianchen Road 1835, 250101, Jinan, P.R. China
*
xphao@sdu.edu.cnxuxg@inspur.com
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Abstract

A simple and effective method is presented to fabricate surface-roughened InGaN/GaN-based light emitting diodes (LEDs) epistructure using annealing-formed, random-distributed Au particle arrays as dry etching mask. The shapes of GaN nanoislands, with horizontal diameters of 100–500 nm and vertical depths up to 140 nm, are determined by Au mask particles. Importantly, this roughened surface exhibits strong photoluminescence (PL) light-output enhancement by a factor of more than 1.6 orders of magnitude. This method will put forward new promising applications in the electroluminescent devices, especially in solid state lighting.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 50 , Issue 1: Focus on Electrical Contacts , April 2010 , 10301
Copyright
© EDP Sciences, 2010

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