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Electronic properties of two coupled Si δ-doped GaAs structures

Published online by Cambridge University Press:  29 November 2002

E. Ozturk ,
H. Sari ,
Y. Ergun  and
I. Sokmen
E. Ozturk*
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
H. Sari
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
Y. Ergun
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
I. Sokmen
Affiliation:
Dokuzeylul University, Department of Physics, Izmir, Turkey
*
eozturk@cumhuriyet.edu.tr
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Abstract

We have theoretically investigated the subband structure of two coupled Si δ-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The electronic properties such as the effective potential, the density profile, the subband energies, the subband populations and Fermi energy have been calculated by solving Schrödinger and Poisson equations self-consistently. In this study, we have seen that the subband structure is quite sensitive to the separation between the two doping layers. We conclude that, if the coupling between two δ-doped GaAs layers is significant, the mobility of electrons in this structure is very high compared to single δ-doped structures because of the strong overlap between the electrons and the ionized donors in single δ-doped structures.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 21 , Issue 2 , February 2003 , pp. 91 - 95
Copyright
© EDP Sciences, 2003

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