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Effect of substrate doping profile on C−V curves for thin MOS capacitors*

Published online by Cambridge University Press:  15 May 2001

O. Simonetti ,
T. Maurel  and
M. Jourdain
O. Simonetti*
Affiliation:
Laboratoire d'Automatique et de Microélectronique (LAM), Université de Reims Champagne Ardenne, UFR Sciences, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2, France
T. Maurel
Affiliation:
Laboratoire d'Automatique et de Microélectronique (LAM), Université de Reims Champagne Ardenne, UFR Sciences, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2, France
M. Jourdain
Affiliation:
Laboratoire d'Automatique et de Microélectronique (LAM), Université de Reims Champagne Ardenne, UFR Sciences, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2, France
*
olivier.simonetti@univ-reims.fr
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Abstract

We use a full quantum model of MOS (metal oxide semiconductor) structure to study the influence of a non-uniform doping profile of the substrate on the capacitance-voltage (C−V) behavior of the structure. For different “realistic” doping profiles, simulations are performed and compared to simulations with an uniform doping and to C−V measurements for samples with oxide thickness in the range [2−5 nm] [1]. In each case, we have extracted the oxide thickness that is found to be independent of the doping and the flat-band voltage which can be shifted up to 200 mV regarding the different profiles tested here. Moreover, below about 3 nm, the shape of the C−V simulation is more affected, which shows that the doping profile of the substrate has a great importance for an accurate C−V modeling of ultra-thin MOS structures.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 14 , Issue 2 , May 2001 , pp. 127 - 130
Copyright
© EDP Sciences, 2001

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Footnotes

*

This paper has been presented at 3es Journées Nationales “Hétérostructures à semiconducteurs IV-IV”, Orsay, July 2000.

References

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