Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T13:09:06.629Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of nanostructured morphologies of SnO2 on field emission properties

Published online by Cambridge University Press:  23 March 2012

L.J. Wang ,
Ch.X. Wu ,
J.Y. Lin ,
Y. Ye ,
Z.X. Yang  and
T.L. Guo
L.J. Wang
Affiliation:
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P.R. China Department of Mathematics and Physics, Xiamen University of Technology, Xiamen 361024, P.R. China
Ch.X. Wu
Affiliation:
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P.R. China
J.Y. Lin
Affiliation:
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P.R. China
Y. Ye
Affiliation:
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P.R. China
Z.X. Yang
Affiliation:
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P.R. China
T.L. Guo*
Affiliation:
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P.R. China
*
ae-mail: gtl_fzu@yahoo.com.cn
Get access

Abstract

SnO2 nanoneedles, nanorods and nanowires were synthesized at different temperatures, and their field emission properties were investigated in detail. On comparing the three nanostructures of SnO2, we find that the synthesis temperature has a prominent influence on the morphology, consequently affecting the field emission properties, especially the turn-on field and the emission current density. Among them, the SnO2 nanoneedle possesses the lowest turn-on field of 1.23 V/μm and the highest current density 2.19 mA/cm2 at 3.06 V/μm. The mechanism behind the influence of the synthesis temperature on the morphology and field emission properties of SnO2 nanostructures is discussed in detail. These results can be valuable for the application of SnO2 nanomaterial in the cathodes of field emission based devices.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 58 , Issue 1 , April 2012 , 10401
Copyright
© EDP Sciences, 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Croci, M. et al., Microelectronics 35, 329 (2004)CrossRef
Guo, T. et al., SID 99 (2010)
Jeong, J.W. et al., J. Vac. Sci. Technol. B 27, 1097 (2009)CrossRef
Zhan, R. et al., J. Vac. Sci. Technol. B 28, 558 (2010)CrossRef
Kim, Y.C. et al., Nanotechnology 20, 095204 (2009)CrossRef
Liu, Z. et al., Appl. Phys. Lett. 89, 103111 (2006)CrossRef
Thongpang, S., Dissertations, [Master Engineering], University of Canterbury, 2007
Li, Q.H. et al., Appl. Phys. Lett. 85, 636 (2004)CrossRef
Ma, L., Guo, T., J. Phys. B: Condens. Matter 403, 3410 (2008)CrossRef
Ma, L.A., et al., Phys. E: Low-Dimens. Syst. Nanostruct. 41, 1500 (2009)CrossRef
Zhan, R. et al., J. Vac. Sci. Technol. B: Microelectron. Process. Phenom. 28, 558 (2010)CrossRef
Wang, Q. et al., Appl. Surf. Sci. 239, 458 (2005)CrossRef
Liu, Y. et al., J. Mater. Sci. 45, 3791 (2010)CrossRef
Dean, K.A., Burgin, T.P., Chalamala, B.R., Appl. Phys. Lett. 79, 1873 (2001)CrossRef
Li, L. et al., Mater. Lett. 61, 4152 (2007)CrossRef
Li, Z. et al., Appl. Surf. Sci. 255, 4470 (2009)CrossRef
Ma, L., Guo, T., Mater. Lett. 63, 295 (2009)CrossRef
Kim, H.W., Lee, J.W., Lee, C., J. Mater. Sci.: Mater. Electron. 20, 99 (2009)
Umar, A. et al., J. Cryst. Growth 282, 131 (2005)CrossRef