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Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/ GaAs HBT
Published online by Cambridge University Press: 12 September 2002
Abstract
The excess leakage current due to the ion implantation isolation process used in the fabrication of double mesa Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistors (SP-HBT) has been investigated. This ion implantation process, used to limit the active emitter length results in a drastic reduction of the current gain. The ideality factor of the recombination current associated with the ion implantation has been found to be 1.8, close to the conventional value of 2.
- Type
- Research Article
- Information
- The European Physical Journal - Applied Physics , Volume 19 , Issue 3 , September 2002 , pp. 195 - 199
- Copyright
- © EDP Sciences, 2002