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Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Published online by Cambridge University Press:  15 July 2004

Zs. J. Horváth ,
L. K. Orlov ,
V. Rakovics ,
N. L. Ivina ,
A. L. Tóth ,
E. S. Demidov ,
F. Riesz ,
V. I. Vdovin  and
Z. Pászti
Zs. J. Horváth*
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, PO Box 49, H-1525, Hungary
L. K. Orlov
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, 603600 Nizhny Novgorod, GSP-105, Russia
V. Rakovics
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, PO Box 49, H-1525, Hungary
N. L. Ivina
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, 603600 Nizhny Novgorod, GSP-105, Russia
A. L. Tóth
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, PO Box 49, H-1525, Hungary
E. S. Demidov
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, 603600 Nizhny Novgorod, GSP-105, Russia
F. Riesz
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, PO Box 49, H-1525, Hungary
V. I. Vdovin
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, 603600 Nizhny Novgorod, GSP-105, Russia
Z. Pászti
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, PO Box 49, H-1525, Hungary
*
horvzsj@mfa.kfki.hu
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Abstract

The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostructures, and their electrical behaviour are studied. In InP structures pinholes, in SiGe/Si structures misfit dislocations were observed in the epitaxial layers. These defects yielded different anomalies of the electrical behaviour, as excess and leakage currents, instabilities, anomalous temperature dependence and anomalous apparent barrier height. It is shown that inspite of anomalies, the electrical measurements provide useful and reliable information about the structures.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 189 - 192
Copyright
© EDP Sciences, 2004

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References

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