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Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers

Published online by Cambridge University Press:  26 January 2007

R. Seguin ,
T. Guillet ,
T. Taliercio ,
P. Lefebvre ,
T. Bretagnon ,
X. B. Zhang ,
J. H. Ryou  and
R. D. Dupuis
R. Seguin
Affiliation:
Groupe d'Étude des Semiconducteurs – CNRS – Université Montpellier II. CC074, 34095 Montpellier Cedex 5, France
T. Guillet
Affiliation:
Groupe d'Étude des Semiconducteurs – CNRS – Université Montpellier II. CC074, 34095 Montpellier Cedex 5, France
T. Taliercio*
Affiliation:
Groupe d'Étude des Semiconducteurs – CNRS – Université Montpellier II. CC074, 34095 Montpellier Cedex 5, France
P. Lefebvre
Affiliation:
Groupe d'Étude des Semiconducteurs – CNRS – Université Montpellier II. CC074, 34095 Montpellier Cedex 5, France
T. Bretagnon
Affiliation:
Groupe d'Étude des Semiconducteurs – CNRS – Université Montpellier II. CC074, 34095 Montpellier Cedex 5, France
X. B. Zhang
Affiliation:
School of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
J. H. Ryou
Affiliation:
School of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
R. D. Dupuis
Affiliation:
School of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
*
thierry.taliercio@ges.univ-montp2.fr
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Abstract

We report continuous wave and time resolved photoluminescence studies of self-assembled InP quantum dots grown by metalorganic chemical vapor deposition. The quantum dots are embedded into indirect band-gap In0.5Al0.5P layers or In0.5Al0.3Ga0.2P layers with a conduction band line-up close to the direct-to-indirect crossover. As revealed by photoluminescence spectra, efficient interdiffusion of species from the barrier layers produces (Al,In)P or (Al,Ga,In)P-dots. This interdiffusion creates potential barriers that are repulsive for electrons of X valleys around the QDs. Both samples show a fast exponential decay component with a time constant between 0.5 and 0.7 ns. In addition, the sample with indirect band gap matrix shows a slow non-exponential time-decay, which is still visible after more than 100 µs. The fast component is attributed to direct recombination of electron-hole pairs in the dots whilst the slow component, which follows a power law t−0.75 results from recombination of holes in the dots and electrons in metastable states around the dots.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 37 , Issue 1 , January 2007 , pp. 15 - 18
Copyright
© EDP Sciences, 2007

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