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Contact-free investigation of the EL2-defect in the surface of GaAs wafers

Published online by Cambridge University Press:  15 July 2004

B. Gründig-Wendrock ,
K. Dornich ,
T. Hahn ,
U. Kretzer  and
J. R. Niklas
B. Gründig-Wendrock*
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
K. Dornich
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
T. Hahn
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
U. Kretzer
Affiliation:
Freiberger Compound Materials GmbH, Am Junger Löwe Brunnen 5, Freiberg, 09599, Germany
J. R. Niklas
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
*
bianca_gruendig@web.de
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Abstract

The EL2 as the most important intrinsic defect in semi-insulating GaAs was already deeply studied in the past. All investigation methods applied so far to semi-insulating GaAs explore the entire depth of the sample and are therefore not suitable to analyse e.g. influences of surface treatments. In this work the detection of EL2 in the surface of samples by the application of microwave detected photo induced current transient spectroscopy will be presented. A correlation between height and sign of the signals and the concentration of acceptors, furthermore of the compensation ratio of the EL2, the position of the Fermi level as well as the specific resistivity was found. The results can be simulated by solving rate equations for the measurement process.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 363 - 366
Copyright
© EDP Sciences, 2004

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