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A comprehensive study of beryllium diffusion in InGaAs using different forms ofkick-out mechanism

Published online by Cambridge University Press:  15 October 1999

J. Marcon ,
S. Koumetz ,
K. Ketata ,
M. Ketata  and
J. G. Caputo
J. Marcon*
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
S. Koumetz
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
K. Ketata
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
M. Ketata
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
J. G. Caputo
Affiliation:
Laboratoire de Mathématiques (UPRES A 6085 du CNRS), INSA de Rouen, B.P. 08, 76131 Mont-Saint-Aignan, France
*
Jerome.Marcon@univ-rouen.frKaouther.Ketata@univ-rouen.fr
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Abstract

Be diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Kick-out mechanisms considering species charges, built-in electric field and Fermi-level effect have been studied. Several forms of kick-out mechanism have been implemented in our simulation programs. Experimental concentration profiles obtained by SIMS analysis have been compared systematically with the numerical results of simulations. We have deduced that the kick-out mechanism Bei0 ↔ Bes− + IIII+ is the dominating diffusion mechanism in InGaAs under our experimental conditions (C0 = 3 × 19 cm−3). With our experimental data, we have found that the effective diffusion coefficient values are D = (7.7−9) × 10−13 cm2 s−1 at T = 700 °C and D = (1.4−1.5) × 10−11 cm2 s−1 at T = 800 °C which is several orders of magnitude higher than most published data. A possible explanation would be the effect of V/III flux ratio.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 1 , October 1999 , pp. 7 - 18
Copyright
© EDP Sciences, 1999

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References

Jourdan, N., Alexandre, F., Dubon-Chevallier, C., Dangla, J., Gao, Y., IEEE Trans. Elec. Dev. 39, 767 (1992). CrossRef
Metzger, R.A., Hafizi, M., Stanchina, W.E., Liu, T., Wilson, R.G., McCray, L.G., Appl. Phys. Lett. 63, 1360 (1993). CrossRef
Tomioka, T., Fujii, T., Ishikawa, H., Sasa, S., Endoh, A., Bamba, Y., Ishii, K., Kataoka, Y., Jpn J. Appl. Phys. 29, L716 (1990). CrossRef
Enquist, P., Hutchby, J.A., de Lyon, T.J., J. Appl. Phys. 63, 4485 (1988). CrossRef
Scott, E.G., Wake, D., Spiller, G.D.T., Davies, G.J., J. Appl. Phys. 66, 5344 (1989). CrossRef
Marcon, J., Gautier, S., Koumetz, S., Ketata, K., Ketata, M., Launay, P., Solid State Commun. 101, 159 (1997). CrossRef
Koumetz, S., Marcon, J., Ketata, K., Ketata, M., Dubon-Chevallier, C., Launay, P., Benchimol, J.L., Appl. Phys. Lett. 67, 2161 (1995). CrossRef
Yu, S., Tan, T.Y., Gösele, U., J. Appl. Phys. 69, 3547 (1991). CrossRef
Uematsu, M., Wada, K., Gösele, U., Appl. Phys. A 55, 301 (1992). CrossRef
Gösele, U., Morehead, F., J. Appl. Phys. 52, 4617 (1981). CrossRef
van Ommen, A.H., J. Appl. Phys. 54, 5055 (1983). CrossRef
Kahen, K.B., Appl. Phys. Lett. 55, 2117 (1989). CrossRef
Rajeswaran, G., Kahen, K.B., Lawrence, D.J., J. Appl. Phys. 69, 1359 (1991). CrossRef
Zahari, M.D., Tuck, B., J. Phys. D 18, 1585 (1985). CrossRef
Reynolds, S., Vook, D.W., Gibbons, J.F., J. Appl. Phys. 63, 1052 (1988). CrossRef
Hu, J.C., Deal, M.D., Plummer, J.D., J. Appl. Phys. 78, 1595 (1995). CrossRef
Antoncik, E., Phys. Stat. Sol. (a) 49, 557 (1995). CrossRef
Yu, S., Tan, T.Y., Gösele, U., J. Appl. Phys. 70, 4827 (1991). CrossRef
Ky, N.H., Ganière, J.D., Reinhart, F.K., Blanchard, B., J. Appl. Phys. 79, 4009 (1996).
Algora, C., Araujo, G.L., Marti, A., J. Appl. Phys. 68, 2723 (1990). CrossRef
Bösker, G., Stolwijk, N.A., Hettwer, H.G., Rucki, A., Jäger, W., Södervall, U., Phys. Rev. B 52, 11927 (1995). CrossRef
Zimmermann, H., Gösele, U., Tan, T.Y., J. Appl. Phys. 73, 150 (1993). CrossRef
Chu, S.N.G., Logan, R.A., Geva, M., Ha, N.T., J. Appl. Phys. 78, 3001 (1995). CrossRef
Deal, M.D., Robinson, H.G., Appl. Phys. Lett. 55, 1990 (1989). CrossRef
G.F. Carey, W.B. Richardson, C.S. Reed, B.J. Mulvaney, Circuit Device and Process Simulation: Mathematical and Numerical Aspects (Wiley, 1996).
W.H. Press, S.A. Teukolsky, W.T. Vetterling, B.P. Flannery, Numerical Recipes in C, 2nd edn. (Cambridge University Press, 1992).
Zimmermann, H., Gösele, U., Tan, T.Y., Appl. Phys. Lett. 62, 75 (1993). CrossRef
Zimmermann, H., Ryssel, H., J. Electrochem. Soc. 139, 256 (1992). CrossRef
Mathiot, D., Phys. Rev. B 45, 13345 (1992). CrossRef
A. Katz, Indium Phosphide and Related Materials: Processing, Technology and Devices (Artech House, 1991).
H. Ibach, H. Lüth, Solid-State Physics, An Introduction to Principles of Materials Science, 2nd edn. (Spinger, 1995).
O. Madelung, Semiconductors-Basic Data, 2nd edn. (Springer, 1996).
Chan, L.Y., Yu, K.M., M.Ben-Tzur, E.E. Haller, J.M. Jaklevic, W. Walukiewicz, C.M. Hanson, J. Appl. Phys. 69, 2998 (1991). CrossRef
Pao, Y.C., Franklin, J., Harris Jr, J.S., J. Cryst. Growth 95, 301 (1989). CrossRef
Mc Levige, W.V., Vaidyanathan, K.V., Streetman, B.G., Ilegems, M., Comas, J., Plew, L., Appl. Phys. Lett. 33, 127 (1978). CrossRef
Morehead, F., Stolwijk, N.A., Meyberg, W., Gösele, U., Appl. Phys. Lett. 42, 690 (1983). CrossRef
Masu, K., Nakatsuka, S.-I., Konagai, M., Tokahashi, K., J. Electrochem. Soc. 129, 1623 (1982). CrossRef
Hu, J.C., Deal, M.D., Plummer, J.D., J. Appl. Phys. 78, 1606 (1995). CrossRef
Deal, M.D., Hansen, S.E., Sigmon, T.W., IEEE Trans. Comp. Aided Design 8, 939 (1989). CrossRef
Mathiot, D., Pfister, J.C., J. Appl. Phys. 55, 3518 (1984). CrossRef
Mathiot, D., Martin, S., J. Appl. Phys. 70, 3071 (1991). CrossRef
Ketata, M., Ketata, K., Koumetz, S., Marcon, J., Dubois, C., Eur. Phys. J. AP 8, 19 (1999). CrossRef